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Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers
- Source :
- Semiconductors. 32:1137-1140
- Publication Year :
- 1998
- Publisher :
- Pleiades Publishing Ltd, 1998.
-
Abstract
- High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described.
- Subjects :
- Materials science
Strain (chemistry)
Laser diode
business.industry
Multiple quantum
Superlattice
Physics::Optics
Heterojunction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Laser
Waveguide (optics)
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
Condensed Matter::Materials Science
Optics
law
Optoelectronics
business
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........bd73c44034c4081cec784949ea8fabaa