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Effects of annealing on the structure and photoluminescence of ZnO films
- Source :
- Acta Physica Sinica. 52:1748
- Publication Year :
- 2003
- Publisher :
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, 2003.
-
Abstract
- Highly oriented polycrystalline ZnO films have been prepared by rf actively sputtering technique. We have investigated the structural and optical properties of ZnO films. x-ray diffraction was employed to analyze the influence of the post-treatment on the properties of ZnO thin films. The grain size increases with annealing temperature. The shift of the diffraction peak position from its normal powder value was observed. The photoluminescence (PL) spectra of these samples consist of one emission peak centred at 2.9eV.The intensities of PL peaks decrease with increasing annealing temperature. We propose that the emission comes from the interstitial Zn.
Details
- ISSN :
- 10003290
- Volume :
- 52
- Database :
- OpenAIRE
- Journal :
- Acta Physica Sinica
- Accession number :
- edsair.doi...........bd15f47c8809e68c2cc78ec5f0947a0b