High Photo Sensing Performance With Electro-Optically Efficient Silicon Based ZnO/ZnMgO Heterojunction Structure

The bulk heterostructure having nanopillar growth on top surface of the proposed photodetector structure is a promising candidate of high detection for high resolution quantum optic and high speed optical communication. Here, we report Si-ZnO-ZnMgO having grown with aligned hexagonal nanopillars for high performance photo detector, due to having its high quantum efficiency. From the proposed structure (electro-optically modified) high responsivity of $2.857\times 10^{2}$ AW $^{-1}$ and detectivity of $1.33\times 10^{15}$ cm Hz $^{1/2}\,\,\text{W}^{-1}$ (3mm $\times$ 3mm) was achieved and also the small performance degradation with increase of temperature shows thermal stability.