Growth of perpendicular FePt thin films at low temperature

In this study, the non-epitaxial FePt thin films with [001] preferred orientation have been prepared by using magnetron sputtering. A Cr/sub 65/Mo/sub 15/Mn/sub 20/ underlayer was used to induce strain energy, and Fe and Pt intermediate layers were used to adjust the orientation of FePt. By depositing films at 250/spl deg/C and post-annealing at 300/spl deg/C in the forming gas, a high perpendicular coercivity about 6800 Oe can be obtained.