High‐Brightness GaN‐Based Blue Light‐Emitting Diodes Using AlON Buffer Layer on 4 In.‐Patterned Sapphire Substrate: Low‐Dislocation‐Defect Epitaxy, Growth Mechanisms, and Higher Device Performance

Subjects

Subjects :

General Materials Science
Condensed Matter Physics

Details

ISSN :

18626270 and 18626254

Database :

OpenAIRE

Journal :

physica status solidi (RRL) – Rapid Research Letters

Accession number :

edsair.doi...........bcf18ac76f5946a71e2496a3485ad6fe

Full Text :

https://doi.org/10.1002/pssr.202300044