Transmission electron microscopy studies of dislocations in physical-vapour-transport-grown silicon carbide

Subjects

Subjects :

Physics and Astronomy (miscellaneous)
Metals and Alloys
General Materials Science
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Details

ISSN :

14606992 and 01418610

Volume :

81

Database :

OpenAIRE

Journal :

Philosophical Magazine A

Accession number :

edsair.doi...........bcf1645862dd01830c27fd8b564dd3e1

Full Text :

https://doi.org/10.1080/01418610110056907