Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2 -Based Resistive Random Access Memory by In Situ TEM Studies (Adv. Mater. 10/2017)

Authors :: Peng Huang
Xi Shen
Xiaoyan Liu
Changzhi Gu
Xiangxiang Guan
Jinfeng Kang
Junjie Li
Chao Li
Yanguo Wang
Bin Gao
Lifeng Liu
Richeng Yu
Yuan Yao
Source :: Advanced Materials. 29
Publication Year :: 2017
Publisher :: Wiley, 2017.

Subjects :: In situ
Materials science
Mechanical Engineering
Nanotechnology
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Electron holography
0104 chemical sciences
Resistive random-access memory
Mechanics of Materials
Resistive switching
General Materials Science
0210 nano-technology

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