Liquid-Phase Deposition of Low-K Organic Silicon-Oxide Films

Low-K silica films were grown from the liquid phase using methyl-triethoxy-silane. Physical and chemical properties were investigated together with electronic properties. The film had dense methyl groups and showed insulating characteristics even under as-grown conditions. The dielectric constant, low-field resistivity and breakdown field-strength were 3.6, 1013 Ωcm and IMV/cm, respectively, for the as-grown film. They were improved to 2.6, more than 1015 Ωcm and more than 3MV/cm, respectively, after 300°C vacuum annealing