Photoconducting and photodielectric properties of heterostructures based on poly-n-epoxypropylcarbazole and poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] doped with zinc octabutylphthalocyanine

We have studied the photoconducting and photodielectric properties of heterostructures based on poly-N-epoxypropylcarbazole and poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] doped with zinc 2,3,9,10,16,17,23,24-octabutylphthalocyanine located between SnO2 :In2O3 and Ag electrical contacts, in the absorption region of the metal complex. We have observed that the photosensitivity is higher when the poly-N-epoxypropylcarbazole films are deposited on a SnO2 :In2O3 electrode. The increased photosensitivity of the heterostructures compared with monolayers of the films is explained by the high efficiency of dissociation of the photogenerated electron–hole pairs and the decrease in the effect of traps for nonequilibrium charge carriers at the film interfaces.