Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

MLA

De-Ren Yang, et al. “Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure.” IEEE Transactions on Nanotechnology, vol. 20, Jan. 2021, pp. 489–94. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........bc4f1d0104fedd9171b6051ce2d9c16c&authtype=sso&custid=ns315887.

APA

De-Ren Yang, Neng-Jie You, Jia-Min Shieh, Wen-Chieh Ho, Hao-Chung Kuo, Sung-Wen Huang Chen, & Jerry Tzou. (2021). Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure. IEEE Transactions on Nanotechnology, 20, 489–494.

Chicago

De-Ren Yang, Neng-Jie You, Jia-Min Shieh, Wen-Chieh Ho, Hao-Chung Kuo, Sung-Wen Huang Chen, and Jerry Tzou. 2021. “Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure.” IEEE Transactions on Nanotechnology 20 (January): 489–94. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........bc4f1d0104fedd9171b6051ce2d9c16c&authtype=sso&custid=ns315887.