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Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability
- Source :
- Semiconductors. 45:530-535
- Publication Year :
- 2011
- Publisher :
- Pleiades Publishing Ltd, 2011.
-
Abstract
- A method for enhancing the temperature stability of injection lasers that is based on introducing asymmetric barrier layers on each side of the quantum-confined active region is suggested. The asymmetric barrier layers prevent electrons from escaping from the active region into the part of the waveguide region where holes are injected and prevent holes from escaping into the part of the waveguide region where electrons are injected. Parameters of the layers that allow implementation of the asymmetric-barrier design using pseudomorphic structures grown on GaAs substrates are determined. The calculation of the threshold characteristics of these laser structures demonstrates that suppression of electron-hole recombination outside the active region attained due to the use of asymmetric barrier layers leads to a significant decrease in the threshold current and an increase in the characteristic temperature of this type of lasers.
- Subjects :
- Threshold current
Materials science
business.industry
media_common.quotation_subject
Electron
Condensed Matter Physics
Laser
Stability (probability)
Asymmetry
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
Semiconductor laser theory
law
Optoelectronics
business
Waveguide
media_common
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 45
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........bc008bbbf4678d509c77c33d1efa984a