A CMOS-integrated four-quadrant symmetric micro-g accelerometer

This paper reports a CMOS-integrated MEMS microgravity accelerometer that implements a novel four-quadrant symmetric device structure with a full-bridge capacitive output. A robust silicon-on-insulator (SOI) MEMS process integrated with a standard CMOS wafer offers a high-sensitivity, low-noise and low-drift accelerometer that achieves measurement of acceleration in micro-g level. The accelerometers are fabricated and packaged on wafer-level with a silicon cap wafer. The measured sensitivity of the CMOS-integrated accelerometer is at 1.8 V/g with a power dissipation of 6mW at 3 V.