Analysis of MZO/CdTe photovoltaic device treated with cadmium bromide

The treatment of CdTe with a CdBr 2 activation annealing step has been performed and the device characterized for its electrical, compositional and structural properties with Capacitance-Voltage, Current-Voltage, Transmission Electron Microscopy, Energy Dispersive X-ray analysis (EDX), Electron Backscattered Diffraction Analysis, photoluminescence and high spatial resolution- Secondary Ion Mass Spectrometry (nanoSIMS). NanoSIMS and EDX show the bromine segregating in the grain boundaries and also in through grain defects. This CdBr 2 treated sample has a net doping density of 1.05x1014 cm-3, an efficiency of 8.6 % with a J sc of 23.7 mAcm-2 and V oc of 762 mV. The bandgap has been calculated to be 1.49 eV.