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A new method for the determination of the interface‐state density in the presence of statistical fluctuations of the surface potential
- Source :
- Applied Physics Letters. 23:265-267
- Publication Year :
- 1973
- Publisher :
- AIP Publishing, 1973.
-
Abstract
- A new method for the analysis of the high‐ and low‐frequency MOS C–V characteristics is proposed to determine the interface‐state density in the presence of statistical fluctuations of the surface potential. This method provides simultaneously the mean oxide charge and the variance of its Gaussian distribution.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 23
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........bbb8d0553e4efa52497ced9440151109
- Full Text :
- https://doi.org/10.1063/1.1654883