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SIMS study of low energy 2H+ ion-implanted YBa2Cu3O7−δ thin films
SIMS study of low energy 2H+ ion-implanted YBa2Cu3O7−δ thin films
- Source :
- Journal of Alloys and Compounds. 195:141-144
- Publication Year :
- 1993
- Publisher :
- Elsevier BV, 1993.
-
Abstract
- Thin films of YBa 2 Cu 3 O 7−δ (YBCO) deposited by sputtering on LaAlO 3 and SrTiO 3 substrates have been implanted with 50 keV 2 H + (deuterium) ions at doses of 1 × 10 12 cm −2 and 1 × 10 16 cm −2 . Depth profiles of the high dose implants obtained by secondary ion mass spectrometry (SIMS) were compared with Monte Carlo simulations (TRIM90) and showed evidence of channelling in the substrates. The superconducting transition temperature, T c , measured by a.c. susceptibility (ACS) disappeared for the high dose implanted samples and X-ray diffractometry (XRD) showed that the YBCO c-axis length had increased, indicating a loss in oxygen content. After annealing the implanted samples with a rapid thermal annealer in O 2 and N 2 atmospheres, SIMS profiles indicated the fast diffusion of deuterium out of the films.
Details
- ISSN :
- 09258388
- Volume :
- 195
- Database :
- OpenAIRE
- Journal :
- Journal of Alloys and Compounds
- Accession number :
- edsair.doi...........bb59b384d0245f942d168a61f990d83a
- Full Text :
- https://doi.org/10.1016/0925-8388(93)90706-s