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SIMS study of low energy 2H+ ion-implanted YBa2Cu3O7−δ thin films

SIMS study of low energy 2H+ ion-implanted YBa2Cu3O7−δ thin films

Authors :
R. E. Somekh
P. Przyslupski
F.M. Saba
M.J. Lee
Jonathan Radcliffe
P. G. Quincey
John A. Kilner
T.J. Tate
L. F. Cohen
Source :
Journal of Alloys and Compounds. 195:141-144
Publication Year :
1993
Publisher :
Elsevier BV, 1993.

Abstract

Thin films of YBa 2 Cu 3 O 7−δ (YBCO) deposited by sputtering on LaAlO 3 and SrTiO 3 substrates have been implanted with 50 keV 2 H + (deuterium) ions at doses of 1 × 10 12 cm −2 and 1 × 10 16 cm −2 . Depth profiles of the high dose implants obtained by secondary ion mass spectrometry (SIMS) were compared with Monte Carlo simulations (TRIM90) and showed evidence of channelling in the substrates. The superconducting transition temperature, T c , measured by a.c. susceptibility (ACS) disappeared for the high dose implanted samples and X-ray diffractometry (XRD) showed that the YBCO c-axis length had increased, indicating a loss in oxygen content. After annealing the implanted samples with a rapid thermal annealer in O 2 and N 2 atmospheres, SIMS profiles indicated the fast diffusion of deuterium out of the films.

Details

ISSN :
09258388
Volume :
195
Database :
OpenAIRE
Journal :
Journal of Alloys and Compounds
Accession number :
edsair.doi...........bb59b384d0245f942d168a61f990d83a
Full Text :
https://doi.org/10.1016/0925-8388(93)90706-s