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Standard measurement method for normal state resistance and critical current of resistively shunted Josephson junctions

Authors :
M Ohkubo
G Uehara
J Beyer
M Mimura
H Tanaka
K Ehara
S Tanaka
T Noguchi
E E Mitchell
C P Foley
R L Fagaly
Source :
Superconductor Science and Technology. 35:045002
Publication Year :
2022
Publisher :
IOP Publishing, 2022.

Abstract

An important parameter of Josephson junctions (JJs) is the product of normal state resistance (R n) and critical current (I c) for designing superconductor analogue devices or digital circuits. Determination of R n and I c from voltage–current (U–I) characteristic curves often faces difficulties; in particular I c is considerably reduced by intrinsic thermal or extrinsic electrical noises. Here, we propose a standard measurement method of R n and intrinsic critical current (I ci) for high-T c superconductor (HTS) grain boundary JJs operated in liquid nitrogen and low-T c superconductor (LTS) multilayer superconductor/normal-conductor/superconductor (SNS) JJs in liquid helium. The applicable condition of this method is that both HTS and LTS JJs have U–I curves compatible with resistively-shunted junction (RSJ) model. Both R n and I ci values are extracted by combining a geometric mean criterion to select a data set and a least-squares fitting method with the RSJ model, eliminating two distortion effects on U–I curves: noise-rounding and self-heating. The combined method ensures relative standard uncertainty values of 1.9% for R n and 8% for I ci or better, when the users follow the standard protocol. It is demonstrated that the combined method is valid for d-wave HTS JJs near 77 K, regardless of peculiarities such as 0–π junction transition in d-wave superconductors at lower temperatures, and s-wave LTS SNS JJs with a wide range of junction parameters. This work is the first step to facilitate standardization for superconductor electronics with JJs.

Details

ISSN :
13616668 and 09532048
Volume :
35
Database :
OpenAIRE
Journal :
Superconductor Science and Technology
Accession number :
edsair.doi...........bb58753b972946ffa398da50fde0eccd