Laser Annealed Ni(Ti) Silicides Formation

Authors :: X.C. Wang
Pooi See Lee
G.C. Lim
F. L. Chow
Y. Setiawan
Kin Leong Pey
Source :: 2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors.
Publication Year :: 2006
Publisher :: IEEE, 2006.
Abstract: Effect of Ti alloying during both RTA and LTA on Ni silicide formation is studied. In the RTA annealed samples, Ni3Si2 was found to be the first silicide formed at 600degC and stable up to 900degC. On the other hand, unique triple layer microstructures were found in the sample after single-pulsed LTA at high laser fluence. Ti rapidly segregates from the alloy melt and forms a protective TiOx overlayer on the surface during rapid solidification

Subjects :: Materials science
Triple layer
Alloy
Metallurgy
engineering.material
Microstructure
Laser
Fluence
law.invention
Overlayer
chemistry.chemical_compound
chemistry
law
Silicide
engineering
Ohmic contact

Database :: OpenAIRE
Journal :: 2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors
Accession number :: edsair.doi...........bb455070d404d1b8422780c30fb15069

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