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A simple Flash memory cell model for transient circuit simulation
- Source :
- IEEE Electron Device Letters. 26:563-565
- Publication Year :
- 2005
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2005.
-
Abstract
- A simple Flash memory cell model for circuit simulation is presented. The proposed model gives an excellent fitting of dc and transient data and does not require additional simulation time comparing with that of a MOSFET transistor. Effective control-gate voltage method and ideal current-mirror technique are introduced to calculate floating-gate voltage. These allow macro modeling of a Flash memory cell in a circuit simulator.
- Subjects :
- Computer science
Transistor
Hardware_PERFORMANCEANDRELIABILITY
Integrated circuit
Electronic circuit simulation
Flash memory
Electronic, Optical and Magnetic Materials
law.invention
Current mirror
law
MOSFET
Hardware_INTEGRATEDCIRCUITS
Electronic engineering
Transient (oscillation)
Electrical and Electronic Engineering
Hardware_LOGICDESIGN
Voltage
Subjects
Details
- ISSN :
- 07413106
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........baa24e0440ff30a8c3ba3317f0b49130
- Full Text :
- https://doi.org/10.1109/led.2005.852525