Memristive Device Characteristics Engineering by Controlling the Crystallinity of Switching Layer Materials

MLA

Boxiang Song, et al. “Memristive Device Characteristics Engineering by Controlling the Crystallinity of Switching Layer Materials.” ACS Applied Electronic Materials, vol. 2, May 2020, pp. 1529–37. EBSCOhost, https://doi.org/10.1021/acsaelm.0c00148.

APA

Boxiang Song, Zerui Liu, Paulo S. Branicio, Subodh Tiwari, Yunxiang Wang, Priya Vashishta, Han Wang, Aravind Krishnamoorthy, Aiichiro Nakano, Wei Wu, Deming Meng, Xiaodong Yan, Pan Hu, Fanxin Liu, Buyun Chen, Tse-Hsien Ou, Rajiv K. Kalia, & Hao Yang. (2020). Memristive Device Characteristics Engineering by Controlling the Crystallinity of Switching Layer Materials. ACS Applied Electronic Materials, 2, 1529–1537. https://doi.org/10.1021/acsaelm.0c00148

Chicago

Boxiang Song, Zerui Liu, Paulo S. Branicio, Subodh Tiwari, Yunxiang Wang, Priya Vashishta, Han Wang, et al. 2020. “Memristive Device Characteristics Engineering by Controlling the Crystallinity of Switching Layer Materials.” ACS Applied Electronic Materials 2 (May): 1529–37. doi:10.1021/acsaelm.0c00148.