Back to Search
Start Over
Ultrathin single-crystalline silicon on quartz (SOQ) by 150 °C wafer bonding
- Source :
- Sensors and Actuators A: Physical. 48:117-123
- Publication Year :
- 1995
- Publisher :
- Elsevier BV, 1995.
-
Abstract
- Single-crystalline silicon films with thicknesses as thin as 2000 A have been prepared on thermally mismatched quartz substrates by a simple wafer-bonding approach. Initial bonding at ≈ 80 °C, storage at room temperature for more than 100 h and multi-temperature (maximum 150 °C) consecutive annealing with a 1 °C min −1 ramping rate have been adopted to strengthen the bond and to prevent debonding at the edge of the bonded pairs during annealing and etching, where thermal shearing and peeling stresses are maximum. Final etching by EDP (ethylenediamine—pyrocatechol—water) effectively reduces the peeling failure of the highly stressed thinned silicon layer, mainly due to a reduced lateral oxide etching rate along the interface. The high carrier mobility in the single-crystalline silicon layer and the transparent and insulating quartz substrate provides a new dimension of freedom in applications.
- Subjects :
- Electron mobility
Materials science
Silicon
Wafer bonding
Annealing (metallurgy)
Metals and Alloys
Oxide
chemistry.chemical_element
Condensed Matter Physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
Thermal
Crystalline silicon
Electrical and Electronic Engineering
Composite material
Instrumentation
Quartz
Subjects
Details
- ISSN :
- 09244247
- Volume :
- 48
- Database :
- OpenAIRE
- Journal :
- Sensors and Actuators A: Physical
- Accession number :
- edsair.doi...........b9f124f2807613542700497897903505