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Stacked Two Ge0.98Si0.02 Nanowire nFETs with High-$\kappa$ Dielectrics Featuring High ION per Footprint of $4800\ \mu\mathrm{A}/\mu\mathrm{m}$ at $\mathrm{V}_{\text{OV}}=\mathrm{V}_{\text{DS}}=0.5\mathrm{V}$
- Source :
- 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
- Publication Year :
- 2023
- Publisher :
- IEEE, 2023.
Details
- Database :
- OpenAIRE
- Journal :
- 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
- Accession number :
- edsair.doi...........b9e41a2981bc2bc947ce939e4076f286