Discovery of highly polarizable semiconductors BaZrS3 and Ba3Zr2S7

We acknowledge support from the National Science Foundation (NSF) under Grant No. 1751736, “CAREER: Fundamentals of Complex Chalcogenide Electronic Materials,” from the MIT Skoltech Program, and from “la Caixa” Foundation MISTI Global Seed Funds. Financial support from the Spanish Ministry of Economy, Competitiveness and Universities, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (Grant No. SEV-2015-0496) and Projects No. MAT2015-73839-JIN (MINECO/FEDER, EU) and No. PID2019-107727RB-I00, and from Generalitat de Catalunya (Grant No. 2017 SGR 1377) is acknowledged. I.F. acknowledges Ramon y Cajal Contract No. RYC-2017- 22531. S.F. acknowledges support from the NSF Graduate Research Fellowship under Grant No. 1122374. The work at Caltech was supported by National Science Foundation Grant No. DMR-1606858. J.R., B.Z., and S.N. acknowledge support from Army Research Office under Award No. W911NF-19- 1-0137 and Air Force Office of Scientific Research under Award No. FA9550-16-1-0335. N.Z.K. and J.M.R. acknowledge support from the U.S. Department of Energy under Grant No. DE-SC0012375 and the DOD-HPCMP for computational resources. N.Z.K. thanks Dr. Michael Waters and Dr. Xuezeng Lu for helpful discussions. S.F. and R.J. acknowledge David Bono and Brian Neltner for helpful discussions and technical assistance.