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A Two-Dimensional Analytical Solution for Short-Channel Effects in Nanowire MOSFETs
- Source :
- IEEE Transactions on Electron Devices. 56:2357-2362
- Publication Year :
- 2009
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2009.
-
Abstract
- This brief presents an analytical solution of the electrostatic potential for nanowire MOSFETs in the subthreshold region by solving Poisson's equation in two dimensions (2D) in both semiconductor and gate insulator regions under cylindrical coordinates. Combining the analytical solution with the current continuity equation, one can derive an expression for the subthreshold current, from which the important parameters for short-channel effects (SCEs), such as threshold voltage rolloff, drain-induced barrier lowering, and subthreshold slope degradation, are analytically extracted. The 2D analytical model for SCEs has been validated by the numerical simulation results.
- Subjects :
- Engineering
Computer simulation
business.industry
Subthreshold conduction
Nanowire
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Subthreshold slope
Electronic, Optical and Magnetic Materials
Computational physics
Threshold voltage
Continuity equation
MOSFET
Electronic engineering
Electrical and Electronic Engineering
Poisson's equation
business
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 56
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........b9c857dac13dd8a0f311973524f67b1a