Cite
A study on the Properties of Cu/SiOC(-H)/p-Si(100) and Cu/TaN/SiOC(-H)/p-Si(100) Interface
MLA
Chang Young Kim, et al. “A Study on the Properties of Cu/SiOC(-H)/p-Si(100) and Cu/TaN/SiOC(-H)/p-Si(100) Interface.” Journal of the Korean Physical Society, vol. 55, Nov. 2009, pp. 1960–64. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........b981aabfc667b6a767f169acb2c63101&authtype=sso&custid=ns315887.
APA
Chang Young Kim, Jong-Kwan Woo, Heang Seuk Lee, Younghun Yu, Chi Kyu Choi, & R. Navamathavan. (2009). A study on the Properties of Cu/SiOC(-H)/p-Si(100) and Cu/TaN/SiOC(-H)/p-Si(100) Interface. Journal of the Korean Physical Society, 55, 1960–1964.
Chicago
Chang Young Kim, Jong-Kwan Woo, Heang Seuk Lee, Younghun Yu, Chi Kyu Choi, and R. Navamathavan. 2009. “A Study on the Properties of Cu/SiOC(-H)/p-Si(100) and Cu/TaN/SiOC(-H)/p-Si(100) Interface.” Journal of the Korean Physical Society 55 (November): 1960–64. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........b981aabfc667b6a767f169acb2c63101&authtype=sso&custid=ns315887.