Cite
Design of down conversion ring mixer using 45 nm Metal gate High-K Strained-Si CMOS Technology for RF applications
MLA
Abhay Chaturvedi. “Design of down Conversion Ring Mixer Using 45 Nm Metal Gate High-K Strained-Si CMOS Technology for RF Applications.” Materials Today: Proceedings, vol. 37, Jan. 2021, pp. 835–39. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........b93cbcf4068766d9c76f9f17b7ba6b04&authtype=sso&custid=ns315887.
APA
Abhay Chaturvedi. (2021). Design of down conversion ring mixer using 45 nm Metal gate High-K Strained-Si CMOS Technology for RF applications. Materials Today: Proceedings, 37, 835–839.
Chicago
Abhay Chaturvedi. 2021. “Design of down Conversion Ring Mixer Using 45 Nm Metal Gate High-K Strained-Si CMOS Technology for RF Applications.” Materials Today: Proceedings 37 (January): 835–39. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........b93cbcf4068766d9c76f9f17b7ba6b04&authtype=sso&custid=ns315887.