Electromigration in sub-micron Copper Interconnects in Low-k Dielectrics

In the advanced on-chip interconnect Technology, the interconnect reliability has been a subject of utmost importance. As the line width is reduced to the sub -micron range, the current carrying capability of the Cu interconnect lines becomes an important issue. This paper discusses the electromigration behavior of Cu interconnects passivated with low-k dielectrics. The influences of the cap dielectrics, the liner thickness, via /liner contact and multiple via on the EM lifetime are discussed. The data on the EM kinetics are also presented.