Suppression of Boron Penetration from S/D Extension to improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65nm node CMOS and beyond

Authors :: Yuzuru Ohji
H. Oda
M. Inuishi
Kiyoshi Hayashi
T. Hayashi
K. Shiga
Tomohiro Yamashita
Takahisa Eimori
Source :: Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Publication Year :: 2004
Publisher :: The Japan Society of Applied Physics, 2004.

Subjects :: chemistry.chemical_compound
Materials science
CMOS
chemistry
business.industry
Oxide
Optoelectronics
Boron penetration
business
AND gate
Leakage (electronics)

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........b8c98532717498b39f5e6b872261c6f1

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