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A 174.3-dB FoM VCO-Based CT $\Delta \Sigma $ Modulator With a Fully-Digital Phase Extended Quantizer and Tri-Level Resistor DAC in 130-nm CMOS

Authors :
Nan Sun
Abhishek Mukherjee
Shaolan Li
Source :
IEEE Journal of Solid-State Circuits. 52:1940-1952
Publication Year :
2017
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2017.

Abstract

This paper presents a high dynamic range (DR) power-efficient voltage-controlled oscillator (VCO)-based continuous-time $\Delta \Sigma $ modulator. It introduces a robust and low-power fully-digital phase extended quantizer that doubles the VCO quantizer resolution compared to a conventional XOR-based phase detector. A tri-level resistor digital-to-analog converter is also introduced as complementary to the new quantizer, enabling high DR while creating a dynamic power saving mechanism for the proposed design. Fabricated in 130-nm CMOS, the analog-to-digital converter achieved peak Schreier Figure-of-Merit (FoM) of 174.3 dB with a high DR of 89 dB over 0.4-MHz BW, consuming only 1 mW under 1.2-V power supply. It also reaches a peak Walden FoM of 59 fJ/conv with 74.7-dB signal-to-noise-and-distortion ratio over 2-MHz BW.

Details

ISSN :
1558173X and 00189200
Volume :
52
Database :
OpenAIRE
Journal :
IEEE Journal of Solid-State Circuits
Accession number :
edsair.doi...........b8c5f79a65e291f732474646d6669aea