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Metal-Insulator Transition in 2D: Anderson Localization in Temperature-Dependent Disorder?
- Source :
- physica status solidi (b). 218:193-200
- Publication Year :
- 2000
- Publisher :
- Wiley, 2000.
-
Abstract
- A generalization of the single-parameter scaling theory of localization is proposed for the case when the random potential depends on temperature. The scaling equation describing the behavior of the resistance is derived. It is shown that the competition between the metallic-like temperature dependence of the Drude resistivity and localization leads to a maximum (minimum) at higher (lower) temperatures. An illustration of a metal–insulator transition in the model of charged traps whose concentration depends on temperature is presented.
- Subjects :
- Physics
Anderson localization
Random potential
Condensed matter physics
Electrical resistivity and conductivity
Generalization
Condensed Matter::Strongly Correlated Electrons
Scaling equation
Metal–insulator transition
Condensed Matter Physics
Scaling theory
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15213951 and 03701972
- Volume :
- 218
- Database :
- OpenAIRE
- Journal :
- physica status solidi (b)
- Accession number :
- edsair.doi...........b84c3fd06c2f3ef9c97a052222d009cd