20-Gb/s ON–OFF-Keying Modulators Using 0.25-$\mu$ m InP DHBT Switches at 290 GHz

Authors :: S. H. Choi
Miguel Urteaga
C. Yi
Moonil Kim
Source :: IEEE Microwave and Wireless Components Letters. 29:360-362
Publication Year :: 2019
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 2019.
Abstract: Performances of high-speed switches operating as terahertz on–off-keying (OOK) modulators are reported. Two types of switches, a passive shunt switch and an amplifier switch, are fabricated using 0.25- $\mu \text{m}$ InP double heterojuction bipolar transistor (DHBT) technology. Small-signal tests show that the amplifier switch possesses superior on–off ratio, but the passive switch has broader bandwidth and smaller group delay ripples. A modulator test setup is built with 20-dB path loss between the transmitter and the receiver. The results indicate that carrier power levels of 14 dBm for the shunt switch and 8 dBm for the amplifier switch are required for 20-Gb/s OOK modulation with bit error rate (BER) of 10−2 at 290 GHz.

Subjects :: Physics
business.industry
Amplifier
On-off keying
Bipolar junction transistor
Transmitter
020206 networking & telecommunications
02 engineering and technology
Condensed Matter Physics
chemistry.chemical_compound
chemistry
Modulation
0202 electrical engineering, electronic engineering, information engineering
Indium phosphide
Bit error rate
Optoelectronics
Electrical and Electronic Engineering
business
Group delay and phase delay

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