Reduction in the contrast of photoconductivity along the area of inhomogeneous P +-N(P)-N +-type silicon structures due to currents along the P +- and N +-type layers

It is shown that photocurrents along p+ and n+-type layers of a locally probed p+-n(p)-n+ silicon structure inhomogeneous in area can lead to a substantial drop of contrast of microwave photoconductivity in comparison to its intrinsic contrast. The study is performed using a model with two solar cells connected by a resistor, in which one of the solar cells is illuminated.