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Stacking the MoS2/GeSe2 vertical van der Waals heterostructure for memory device
- Source :
- Applied Physics Letters. 117:153104
- Publication Year :
- 2020
- Publisher :
- AIP Publishing, 2020.
-
Abstract
- Recently, two-dimensional materials have shown great potential in the application of memories due to their atomic thickness and excellent electrical properties. Furthermore, van der Waals heterostructures consisting a variety of two-dimensional materials provide more possibilities for memory research. Here, we design a simple memory device based on the molybdenum disulfide/germanium diselenide (MoS2/GeSe2) van der Waals heterostructure, which exhibits a large memory window of about 10 V in the gate range of ±10 V. Its ratio of program/erase current reaches over 102 and remains after more than 2 × 103 s and 103 cycles, showing good stability and reliability. Compared to conventional floating gate memory, the device based on this structure provides promising advantages in the reduction of the device size and simplification of manufacturing.
- Subjects :
- 010302 applied physics
Range (particle radiation)
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Stacking
chemistry.chemical_element
Heterojunction
Germanium
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Reduction (complexity)
chemistry.chemical_compound
symbols.namesake
Reliability (semiconductor)
chemistry
0103 physical sciences
symbols
Optoelectronics
van der Waals force
0210 nano-technology
business
Molybdenum disulfide
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 117
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........b747805f4617e007e82fd22586681397
- Full Text :
- https://doi.org/10.1063/5.0021579