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Stacking the MoS2/GeSe2 vertical van der Waals heterostructure for memory device

Authors :
Yewu Wang
Xiaoxiang Wu
Boran Xing
Xinyue Niu
Mengge Li
Yali Liu
Shucheng Zhang
Jian Sha
Wenxuan Guo
Ying Yu
Xiaoyuan Yan
Jiadong Yao
Source :
Applied Physics Letters. 117:153104
Publication Year :
2020
Publisher :
AIP Publishing, 2020.

Abstract

Recently, two-dimensional materials have shown great potential in the application of memories due to their atomic thickness and excellent electrical properties. Furthermore, van der Waals heterostructures consisting a variety of two-dimensional materials provide more possibilities for memory research. Here, we design a simple memory device based on the molybdenum disulfide/germanium diselenide (MoS2/GeSe2) van der Waals heterostructure, which exhibits a large memory window of about 10 V in the gate range of ±10 V. Its ratio of program/erase current reaches over 102 and remains after more than 2 × 103 s and 103 cycles, showing good stability and reliability. Compared to conventional floating gate memory, the device based on this structure provides promising advantages in the reduction of the device size and simplification of manufacturing.

Details

ISSN :
10773118 and 00036951
Volume :
117
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........b747805f4617e007e82fd22586681397
Full Text :
https://doi.org/10.1063/5.0021579