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Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method
- Source :
- Journal of Crystal Growth. 467:6-11
- Publication Year :
- 2017
- Publisher :
- Elsevier BV, 2017.
-
Abstract
- We report the growth of p -type As-doped, Cd-rich CdTe single crystals using metallic Cd as the solvent in the traveling-heater method. We investigate the growth process from Cd solution in terms of the solid-liquid interface shape and the effects of As incorporation on p -type doping. The resulting CdTe crystals have Cd-rich composition which enhances p -type doping. The As doping efficacy was measured for As concentrations by the combination of inductively coupled plasma mass spectrometry, capacitance-voltage measurements. The p -type doping concentration varied from 6 × 10 15 to 8 × 10 16 cm −3 with increasing As concentration, with an apparent doping limit just below 10 17 cm −3 .
- Subjects :
- 010302 applied physics
Materials science
Doping
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Cadmium telluride photovoltaics
Characterization (materials science)
Inorganic Chemistry
Metal
Solvent
chemistry
visual_art
0103 physical sciences
Materials Chemistry
visual_art.visual_art_medium
0210 nano-technology
Inductively coupled plasma mass spectrometry
Arsenic
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 467
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........b727ee6d85bac278f5f4611a58f10283