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Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

Authors :
Mikhail V. Maximov
F. I. Zubov
Alexander Mintairov
Charis Mesaritakis
A. M. Nadtochy
A. V. Savel’ev
N. V. Kryzhanovskaya
E. M. Arakcheeva
Dimitrios Syvridis
Eduard Moiseev
A. E. Zhukov
D.A. Livshits
Andrey A. Lipovskii
Alexandros Kapsalis
M. M. Kulagina
Source :
Semiconductors. 47:1387-1390
Publication Year :
2013
Publisher :
Pleiades Publishing Ltd, 2013.

Abstract

Microring cavities (diameter D = 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter D = 6 μm. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of D = 2.7 μm.

Details

ISSN :
10906479 and 10637826
Volume :
47
Database :
OpenAIRE
Journal :
Semiconductors
Accession number :
edsair.doi...........b702a4ff3a0d2d22a236c278bf645c00
Full Text :
https://doi.org/10.1134/s1063782613100187