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Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
- Source :
- Semiconductors. 47:1387-1390
- Publication Year :
- 2013
- Publisher :
- Pleiades Publishing Ltd, 2013.
-
Abstract
- Microring cavities (diameter D = 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter D = 6 μm. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of D = 2.7 μm.
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 47
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........b702a4ff3a0d2d22a236c278bf645c00
- Full Text :
- https://doi.org/10.1134/s1063782613100187