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Growth and Annealing of ZnO Films Grown by Spray Pyrolysis
- Source :
- Japanese Journal of Applied Physics. 47:8170-8173
- Publication Year :
- 2008
- Publisher :
- IOP Publishing, 2008.
-
Abstract
- Undoped and In-doped ZnO films on glass substrate were successfully grown by spray pyrolysis at 500 °C. The samples were annealed under N2 atmosphere between 100 and 600 °C for 5 min. The lattice constants and grain sizes of both samples were unchanged with increasing annealing temperature. However, the photoluminescence intensity of the In-doped sample markedly decreased in comparison with that of the undoped sample with increasing annealing temperature. The carrier concentration increased with increasing annealing temperature. These findings indicated that the number of nonradiative recombination centers of the In-doped ZnO samples markedly increased.
- Subjects :
- Photoluminescence
Materials science
Physics and Astronomy (miscellaneous)
Atomic force microscopy
Annealing (metallurgy)
business.industry
General Engineering
Analytical chemistry
General Physics and Astronomy
Spray pyrolysis
Lattice constant
Semiconductor
business
Transparent conducting film
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 47
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........b6fae0bd36bbce2eeda8b9c716beef05