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Effect of Annealing on Resistive Switching Behavior of PMMA Based RRAM

Authors :
Ishan Varun
Ajay Kumar Mahato
Vivek Raghuwanshi
Deepak Bharti
Shree Prakash Tiwari
Source :
2018 4th IEEE International Conference on Emerging Electronics (ICEE).
Publication Year :
2018
Publisher :
IEEE, 2018.

Abstract

A PMMA based Ag/PMMA/Ti/Glass RRAM devices are reported for their resistive switching behavior. Switching performance was tested on three samples fabricated at different PMMA annealing temperatures. The switching voltages have shown a down trend with increasing annealing temperature. The Current on/off ratio and retention time also degrades with annealing temperature. The devices exhibited significantly low switching voltages (

Details

Database :
OpenAIRE
Journal :
2018 4th IEEE International Conference on Emerging Electronics (ICEE)
Accession number :
edsair.doi...........b66805413f383e7f0cd622ea74cd99ad
Full Text :
https://doi.org/10.1109/icee44586.2018.8937901