Back to Search
Start Over
Effect of Annealing on Resistive Switching Behavior of PMMA Based RRAM
- Source :
- 2018 4th IEEE International Conference on Emerging Electronics (ICEE).
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- A PMMA based Ag/PMMA/Ti/Glass RRAM devices are reported for their resistive switching behavior. Switching performance was tested on three samples fabricated at different PMMA annealing temperatures. The switching voltages have shown a down trend with increasing annealing temperature. The Current on/off ratio and retention time also degrades with annealing temperature. The devices exhibited significantly low switching voltages (
Details
- Database :
- OpenAIRE
- Journal :
- 2018 4th IEEE International Conference on Emerging Electronics (ICEE)
- Accession number :
- edsair.doi...........b66805413f383e7f0cd622ea74cd99ad
- Full Text :
- https://doi.org/10.1109/icee44586.2018.8937901