Growth of Beta Silicon Carbide Film on Si by Hot-Filament CVD

In this paper, we will report fabrication and structure study of single crystal β-SiC film on Si substrate by hot-filament chemical vapor deposition (HFC VD). The reaction sources are hydrogen-diluted methane(CH4) and Silane(SiH4). The wafer surface temperature is about 650°C. The typical growth rate is 200nm/h. Raman scattering spectrum shows a peak centering at 960cm-1 with a full width at half magnitude (FWHM) of 75cm-1. At room temperature, the photoluminescence spectrum gives a wide band at 580nm (2.2eV) with a FWHM of 55nm. Fourier transmission infrared (FT-IR) spectrum exhibits an absorption peak at 12.6 μm XRD and XPS analysis indicate that the epilayer is a stoichiometrical single crystal cubic silicon carbide film.