Characterization of electroluminescent structures based on gallium arsenide ion-implanted with ytterbium and oxygen

Authors :: V. M. Konnov
V. A. Dravin
N. N. Loiko
D. W. Palmer
A. A. Gippius
E. A. Bobrova
S. G. Chernook
Source :: Semiconductors. 35:325-330
Publication Year :: 2001
Publisher :: Pleiades Publishing Ltd, 2001.
Abstract: Light-emitting diodes based on GaAs crystals ion-implanted with ytterbium and oxygen were fabricated. The current-voltage and capacitance-voltage characteristics of these diodes were analyzed. The deep-level centers were studied by the deep-level transient spectroscopy. The electroluminescence spectra of the structures include the emission lines related to optical transitions within the 4f shell of Yb3+ ions.

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