Homoepitaxy of YBa2Cu3Ox by MOCVD

We have investigated the surface of high quality YBa2Cu2Ox single crystal substrates, fabricated from YBa2Cu3Ox single crystals grown by the crystal pulling method, for homoepitaxy. They have good crystallinity with χmin of under 2% evaluated by Rutherford backscattering spectrometry and good surface morphology with unit-cell steps observed by atomic force microscopy. Furthermore, we also discuss the initial stage of homoepitaxial growth by using metalorganic chemical vapor deposition method and YBa2Cu3Ox single crystal substrates as mentioned above.