Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode with optimized well number

The well-number dependence of the optical pumping threshold power for stimulated emission of GaInN multiple quantum-well (MQW) laser structures was investigated. The pumping threshold power for a three GaInN MQW sample was found to be as low as 33 kW/cm 2 at room temperature. The room-temperature pulsed operation of a five GaInN MQW laser diode (LD), whose number of wells was determined based on the optical pumping experiment, was also demonstrated. The lowest threshold current density was 9.5 kA/cm 2 . The lasing wavelength was 417.5 nm with a full-width at half-maximum (FWHM) less than the spectrum resolution of 0.2 nm.