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Passivation of GaSb by sulfur treatment
- Source :
- Journal of Electronic Materials. 23:7-12
- Publication Year :
- 1994
- Publisher :
- Springer Science and Business Media LLC, 1994.
-
Abstract
- Some features of the band structure of GaSb have led to a renewed interest in this material. It is well known that Ga(Al)Sb alloys are good candidates to realize avalanche photodetectors, due to their high hole kp/electron kn ionization coefficient ratio. In addition, recent studies have shown GaSb to be attractive for realizing tunneling barriers exhibiting a high value of the peak-to-valley current ratio or IR photodectectors. In order to optimize such devices, the passivation of GaSb is of great interest. Unfortunately, very few investigations have been reported in the literature on GaSb passivation. This paper reports experimental results concerning GaSb surface passivation using a chemical sulfuration method. Physicochemical analysis is attempted through ellipsometric, photoluminescence, and Auger electron spectroscopy measurements. Polluting oxygen and carbon agents are found to be removed from the surface using this process, leading to Schottky diodes of better quality. In addition, the sulfur treatment is shown to stabilize the cleaned surface.
- Subjects :
- Auger electron spectroscopy
Photoluminescence
Avalanche diode
Materials science
Passivation
business.industry
Schottky diode
Semiconductor device
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Electronic band structure
Quantum tunnelling
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 23
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........b49f3d3eab4cb350e51a1a3c85d58bad