Cite

Very high electron mobility In0.8Ga0.2As heterostructure grown by molecular beam epitaxy

MLA

Munecazu Tacano, et al. “Very High Electron Mobility In0.8Ga0.2As Heterostructure Grown by Molecular Beam Epitaxy.” Journal of Electronic Materials, vol. 20, Dec. 1991, pp. 1081–85. EBSCOhost, https://doi.org/10.1007/bf03030211.



APA

Munecazu Tacano, Yoshiki Ueno, Yukihiro Takeuchi, & Yoshinobu Sugiyama. (1991). Very high electron mobility In0.8Ga0.2As heterostructure grown by molecular beam epitaxy. Journal of Electronic Materials, 20, 1081–1085. https://doi.org/10.1007/bf03030211



Chicago

Munecazu Tacano, Yoshiki Ueno, Yukihiro Takeuchi, and Yoshinobu Sugiyama. 1991. “Very High Electron Mobility In0.8Ga0.2As Heterostructure Grown by Molecular Beam Epitaxy.” Journal of Electronic Materials 20 (December): 1081–85. doi:10.1007/bf03030211.