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Effect of strains on electronic and optical properties of monolayer SnS: Ab-initio study
- Source :
- Physica B: Condensed Matter. 545:255-261
- Publication Year :
- 2018
- Publisher :
- Elsevier BV, 2018.
-
Abstract
- In this work, we consider the effect of biaxial ɛb and uniaxial ɛac∕zz strains on electronic properties and optical parameters of monolayer SnS using first-principles calculations. Our calculations show that the monolayer SnS is a semiconductor with an indirect energy gap of 1.63 eV at the equilibrium state. While an effect of tensile strains on bandgap is quite small, the bandgap of monolayer SnS depends strongly on the compressive strains, especially a semiconductor-metal phase transition is occurred due to the uniform compressive biaxial strain at −14% elongation. The optical spectra of the monolayer are high anisotropic, and the absorption coefficient of monolayer SnS tends to increase in the presence of compression strains, while the tensile strains reduce the absorption coefficient of the monolayer SnS. We believe that the phase transition and extraordinary optical properties of the strained monolayer SnS will make it become a useful material in nanoelectromechanical devices and optoelectronic applications.
- Subjects :
- Phase transition
Materials science
Condensed matter physics
business.industry
Band gap
Ab initio
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
Semiconductor
Attenuation coefficient
0103 physical sciences
Monolayer
Electrical and Electronic Engineering
010306 general physics
0210 nano-technology
Anisotropy
business
Electronic band structure
Subjects
Details
- ISSN :
- 09214526
- Volume :
- 545
- Database :
- OpenAIRE
- Journal :
- Physica B: Condensed Matter
- Accession number :
- edsair.doi...........b43f1ea4e3aaf39afef49c78b5cbb5be