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Making Ferromagnetic Heterostructures Si/Zn(1-X)MnXSiAs2 and Ge/Zn(1-X)MnXGeAs2

Authors :
I. V. Fedorchenko
A. Rumiantsev
Lukasz Kilanski
R. Szymczak
L.A. Koroleva
Witold Dobrowolski
T. Kuprijanova
Source :
Solid State Phenomena. :313-316
Publication Year :
2010
Publisher :
Trans Tech Publications, Ltd., 2010.

Abstract

The heterostructure ferromagnetic/semiconductor ZnSiAs2/Si was obtained by using the Si-ZnAs2 phase diagram. The magnetic properties of Zn1-XMnXSiAs2 bulk crystals and ferromagnetic layered heterostructures were similar. The same method was used for preparing a ferromagnetic layer ZnGeAs2 on a germanium substrate.

Subjects

Subjects :
Materials science
Ferromagnetic material properties
Condensed matter physics
Spintronics
chemistry.chemical_element
Germanium
Heterojunction
Substrate (electronics)
Magnetic semiconductor
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Condensed Matter::Materials Science
chemistry
Ferromagnetism
Condensed Matter::Strongly Correlated Electrons
General Materials Science
Phase diagram

Details

ISSN :
16629779
Database :
OpenAIRE
Journal :
Solid State Phenomena
Accession number :
edsair.doi...........b42d76dac7adad343571e37e2e52e0dd
Full Text :
https://doi.org/10.4028/www.scientific.net/ssp.168-169.313
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