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Wafer-Level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs
- Source :
- IEEE Electron Device Letters. 33:200-202
- Publication Year :
- 2012
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2012.
-
Abstract
- This letter demonstrates a new technology for the heterogeneous integration of GaN and Si devices, which is scalable at least up to 4-in wafers and compatible with conventional Si fabrication. The key step in the proposed technology is the fabrication of a Si (100)-GaN-Si hybrid wafer by bonding a silicon (100) on insulator (SOI) wafer to the nitride surface of an AlGaN/GaN on Si (111) wafer. A thin layer of silicon oxide is used to enhance the bonding between the SOI and the AlGaN/GaN wafers. Using this technology, Si pMOSFETs and GaN high-electron-mobility transistors have been fabricated on a 4-in hybrid wafer. Due to the high-temperature stability of GaN as well as the high-quality semiconductor material resulting from the transfer method, these devices exhibit excellent performance. A hybrid power amplifier has been fabricated as a circuit demonstrator, which shows the potential to integrate GaN and Si devices on the same chip to enable new performance in high-efficiency power amplifiers, mixed signal circuits, and digital electronics.
- Subjects :
- Materials science
Silicon
Wafer bonding
business.industry
Transistor
Wide-bandgap semiconductor
chemistry.chemical_element
Silicon on insulator
Gallium nitride
Hardware_PERFORMANCEANDRELIABILITY
Electronic, Optical and Magnetic Materials
law.invention
chemistry.chemical_compound
chemistry
law
MOSFET
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Wafer
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 33
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........b41fb6bdb65cd1144117fab5e1c70f23