Structure and Electrical Property of CuInS2 Thin Films Deposited by DC Reactive Magnetron Sputtering

Authors :: Chang YAN
Fang-Yang LIU
Yan-Qing LAI
Yi LI
Jie LI
Ye-Xiang LIU
Source :: Journal of Inorganic Materials. 26:1287-1292
Publication Year :: 2011
Publisher :: China Science Publishing & Media Ltd., 2011.
Abstract: 采用直流反应磁控溅射技术在玻璃基底上制备了太阳电池用CuInS 2 薄膜. 以X射线能量色散谱仪、扫描电镜、X射线衍射仪、冷热探针和霍尔效应测试系统对薄膜进行了表征. 结果表明, 薄膜成分可通过调整Cu靶和In靶的功率比PCu/PIn来进行调控; 而薄膜形貌则取决于靶功率比和薄膜的成分. 随着PCu/PIn的增大, 薄膜物相由富铟相向CuInS 2 转变. 对于CuInS 2 薄膜, 提高铜铟原子比[Cu]/[In]可改善薄膜的结晶质量. 但当薄膜富铜时, 过高的[Cu]/[In]又会导致薄膜结晶质量的下降. 当CuInS 2 薄膜为富铜与略微贫铜时, 其导电类型为P型; 且载流子浓度随[Cu]/[In]增加而增大, 并远高于其它贫铜薄膜. CuInS 2 薄膜的载流子迁移率明显高于富铟相薄膜; 且随着[Cu]/[In]的提高, CuInS 2 薄膜的载流子迁移率呈上升趋势, 而电阻率则迅速下降.

Subjects :: Inorganic Chemistry
Crystallography
Materials science
General Materials Science

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