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Low Voltage and High Speed 1Xnm 1T1C FE-RAM with Ultra-Thin 5nm HZO
- Source :
- 2021 IEEE International Electron Devices Meeting (IEDM).
- Publication Year :
- 2021
- Publisher :
- IEEE, 2021.
Details
- Database :
- OpenAIRE
- Journal :
- 2021 IEEE International Electron Devices Meeting (IEDM)
- Accession number :
- edsair.doi...........b368d1e138f827222b6bcacae8569598
- Full Text :
- https://doi.org/10.1109/iedm19574.2021.9720545