Low-frequency noise in deep-submicron metal–oxide–semiconductor field-effect transistors

The author reviews the recent results obtained on the low-frequency noise characteristics of deep-submicron metal-oxide-semiconductor field-effect transistors (MOSFETs). The manuscript covers measurements, analysis and modelling of 1/f noise as well as random telegraph signals (RTS). In addition, techniques are presented where RTS and 1/f noise measurements can be utilised to characterise the oxide traps responsible for these fluctuations, namely the position of the trap in the oxide and along the conduction channel, the trap energy, and the associated screened scattering coefficient. Most of the analysis is based on the classical three-dimensional treatment of charge carrier calculation, although a section is reserved for charge quantisation and its effect on RTS. For noise modelling, an improved physics-based 1/f noise model is presented where the Berkeley short channel IGFET model (BSIM3) has been modified to include the threshold variation along the channel. This model merges into the classical BSIM3 for supermicron devices. The noise models presented in the manuscript are based on data that were obtained on many submicron channel length n- and p-MOSFETs made by different leading manufacturers using different technologies. It is expected that the developed models will be valid for all advanced MOSFETs.