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Mode localization in defect-free GaN-based bottom-up photonic quasicrystal lasers
- Source :
- ISLC 2012 International Semiconductor Laser Conference.
- Publication Year :
- 2012
- Publisher :
- IEEE, 2012.
-
Abstract
- GaN-based bottom-up photonic quasicrystal (PQC) lasers were realized and characterized. Photonic quasicrystal nanopillars were realized by nanoimprint technique and selective area growth. Highly localized mode was identified for the first time in GaN-based PQC lasers.
Details
- Database :
- OpenAIRE
- Journal :
- ISLC 2012 International Semiconductor Laser Conference
- Accession number :
- edsair.doi...........b302de53a98ab51cbb92ddfea3ff1c95