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Induced growth of high quality ZnO thin films by crystallized amorphous ZnO
- Source :
- Chinese Physics. 15:2710-2712
- Publication Year :
- 2006
- Publisher :
- IOP Publishing, 2006.
-
Abstract
- This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80°C. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.
- Subjects :
- Photoluminescence
Materials science
Scanning electron microscope
business.industry
General Physics and Astronomy
chemistry.chemical_element
Zinc
medicine.disease_cause
Amorphous solid
Optics
chemistry
Chemical engineering
medicine
Pyrolytic carbon
Thin film
business
Layer (electronics)
Ultraviolet
Subjects
Details
- ISSN :
- 17414199 and 10091963
- Volume :
- 15
- Database :
- OpenAIRE
- Journal :
- Chinese Physics
- Accession number :
- edsair.doi...........b2af0e2f74e23a8d530b75c2c7f6b243